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| 2SC4617_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors | |||
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RoHS
2SC4617
2SC4617 TRANSISTORï¼NPNï¼
D FEATURES
Power dissipation
T PCM : 0.15 Wï¼Tamb=25âï¼
.,L Collector current
ICM
: 0.15 A
Collector-base voltage
V(BR)CBO : 60
V
O Operating and storage junction temperature range
TJï¼Tstg: -55â to +150â
SOT-523
1. BASE
2. EMITTER
3. COLLECTOR
C ELECTRICAL CHARACTERISTICSï¼Tamb=25â unless otherwise specifiedï¼
IC Parameter
Symbol Test conditions
MIN TYP
Collector-base breakdown voltage
V(BR)CBO Ic=50μA,IE=0
60
N Collector-emitter breakdown voltage
V(BR)CEO Ic=1mA,IB=0
50
Emitter-base breakdown voltage
V(BR)EBO IE=50μA,IC=0
7
O Collector cut-off current
ICBO
VCB=60V,IE=0
R Emitter cut-off current
IEBO
VEB=7V,IC=0
T DC current gain
hFE(1) VCE=6V,IC=1mA
120
C Collector-emitter saturation voltage
VCE(sat) IC=50mA,IB=5mA
Transition frequency
fT
VCE=12V,IC=2mA,f=100MHz
180
E Collector output capacitance
Cob
VCB=12V,IE=0,f=1MHz
MAX UNIT
V
V
V
0.1 μA
0.1 μA
560
0.4 V
MHz
3.5
pF
EL CLASSIFICATION OF hFE(1)
Rank
J Range
WEMarking
Q
120-270
BQ
R
180-390
BR
S
270-560
BS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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