2SC4548 Datasheet, PDF (1/1 Pages) Unisonic Technologies – HIGH VOLTAGE DRIVER APPLICATION

RoHS
2SC4548
2SC4548 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
500 mW (Tamb=25℃)
.,L ^{Collector current}
I_CM:
200 mA
Collector-base voltage
O _V(BR)CBO:
400 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
Base-emitter saturation voltage
L _{Transition frequency}
E _{Collector output capacitance}
J _{Turn-ON Time}
Turn-OFF Time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
Cob
ton
toff
Test conditions
Ic=10µA, IE=0
Ic=1mA, IB=0
IE=10µA, IC=0
VCB=300V, IE=0
VEB=4V, IC=0
VCE=10V, IC=50mA
IC=50mA, IB=5mA
IC=50mA, IB=5mA
VCE=30V, IC=10mA
VCB=30V, IE=0, f=1MHz
VCC=150V, Ic=50mA,
IB1=-IB2=5mA
MIN TYP MAX UNIT
400
V
400
V
5
V
0.1 µA
0.1 µA
60
200
0.6 V
1
V
70
MHz
4
pF
0.25
µs
5
µs
WE^{CLASSIFICATION OF hFE(1)}
Rank
D
E
Range
60-120
100-200
Marking
CN
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]