2SC4177 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

RoHS
2SC4177
2SC4177 ^D _FEATURES
TRANSISTOR (NPN )
T _{Power dissipation}
.,L ^PCM^:
0.15 W (Tamb=25℃)
Collector current
O _ICM:
0.1 A
Collector-base voltage
C _{V(BR)CBO: 60}
V
Operating and storage junction temperature range
IC ^{TJ, Tstg: -55℃ to +150℃}
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
N _Parameter
O _{Collector-base breakdown voltage}
Collector-emitter breakdown voltage
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Emitter cut-off current}
E _{DC current gain}
L _{Collector-emitter saturation voltage}
E _{Base-emitter saturation voltage}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
Test conditions
MIN
Ic=100µA , IE=0
60
IC= 1mA , IB=0
50
IE=100µA, IC=0
5.0
VCB=60V , IE=0
VEB=5V , IC=0
VCE=6.0 V, IC= 1mA
90
IC=100 mA, IB=10mA
IC= 100mA, IB=10mA
Transition frequency
EJ ^{Output Capacitance}
fT
VCE= 6.0V, IE= -10mA
250
VCB=6.0V, IE= 0
C_ob
f=1.0MHz
MAX
0.1
0.1
600
0.3
1.0
3.0
UNIT
V
V
V
µA
µA
V
V
MHz
pF
W^{CLASSIFICATION OF hFE}
Marking
L4
L5
L6
L7
Range
90-180
135-270
200-400
300-600
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]