2SC4115S Datasheet, PDF (1/1 Pages) Rohm – Low Frequency Transistor (20V, 3A)

RoHS
2SC4115S
2SC4115S _{D FEATURES}
TRANSISTOR (NPN)
T _{Power dissipation}
.,L ^PD:
0.3 W (Tamb=25℃)
Collector current
O _{I CM:}
Collector-base voltage
3A
C _V(BR)CBO:
40 V
Operating and storage junction temperature range
IC ^{TJ, Tstg: -55℃ to +150℃}
TO-92S
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
N _Parameter
O _{Collector-base breakdown voltage}
R _{Collector-emitter breakdown voltage}
T Emitter-base breakdown voltage
Collector cut-off current
C _{Emitter cut-off current}
E _{DC current gain}
L _{Collector-emitter saturation voltage*}
E _{Transition frequency}
z Measured Using Pulse Current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCEsat
fT
Test conditions
Ic= 50µA , IE=0
IC= 1 mA , IB=0
IE=50µA, IC=0
VCB=30V , IE=0
VEB= 5V , IC=0
VCE=2 V, IC= 0.1A
IC= 2A, IB=0.1A
VCE=2V, IC=0.5 A
F=100MHz
MIN TYP
40
20
6
120
200
MAX
0.1
0.1
560
0.5
UNIT
V
V
V
µA
µA
V
MHz
J _{CLASSIFICATION OF hFE}
E_Rank
WRange
Q
120-270
R
180-390
S
270-560
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