2SC4003 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – High-Voltage Driver Applications

RoHS
2SC4003
2SC4003 TRANSISTOR (NPN)
TO-251
D FEATURES
Power dissipation
T _PCM:
1 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
200 mA
Collector-base voltage
O _{V(BR)CBO: 400 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
1. BASE
2. COLLECTOR
3. EMITTER
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter saturation voltage}
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
Test conditions
Ic=10µA, IE=0
Ic=1mA, IB=0
IE=10µA, IC=0
VCB=300V, IE=0
VEB=4V, IC=0
VCE=10V, IC=50mA
IC=50mA, IB=5mA
IC=50mA, IB=5mA
VCE=30V, IC=10mA
MIN TYP MAX UNIT
400
V
400
V
5
V
0.1 µA
0.1 µA
60
200
0.6 V
1
V
70
MHz
J ^E _{CLASSIFICATION OF hFE(1)}
ERank
W^Range
D
60-120
E
100-200
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