2SC3838K Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – High-Frequency Amplifier Transistor

RoHS
2SC3838K
2SC3838K TRANSISTOR (NPN)
D _FEATURES
T _{Power dissipation}
.,L ^PCM:
0.15 W (Tamb=25℃)
Collector current
I_CM:
0.05 A
O _{Collector-base voltage}
V_(BR)CBO:
20 V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
Emitter cut-off current
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Transition frequency}
E _{Noise figure}
Symbol
V (BR) CBO
V (BR) CEO
V (BR) EBO
ICBO
IEBO
hFE
VCE (sat)
fT
F
Test conditions
Ic=10µA, IE=0
Ic= 1mA, IB=0
IE= 10µA, IC=0
VCB= 10 V , IE=0
VEB= 2V , IC=0
VCE= 10V, IC= 5mA
IC=-10 mA, IB= 5mA
VCE=10V, IC= 10mA
f = 500MHz
VCE=6V, IC= 2mA
f = 500MHz
MIN
20
11
3
27
1.4
TYP
MAX
0.5
0.5
270
0.5
UNIT
V
V
V
µA
µA
V
GHz
4
dB
J _{CLASSIFICATION OF hFE}
E_Rank
L
W^Range
27-56
M
39-82
N
56-120
P
82-180
Q
120-270
Marking
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