2SC380TM Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY AMPLIFIER APPLICATIONS)

RoHS
2SC380TM
2SC380TM TRANSISTOR (NPN)
FEATURE
D _{Power dissipation}
T _PCM:
0.3 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
0.05 A
Collector-base voltage
V_(BR)CBO:
35 V
O _{Operating and storage junction temperature range}
C _{Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
TJ: 150℃
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Emitter cut-off current}
DC current gain
E _{Collector-emitter saturation voltage}
L _{Base-emitter voltage}
E _{Transition frequency}
J _{Collector Output Capacitance}
ECollector-Base Time Constant
W^{Power Gain}
Symbol
Test conditions
V(BR)CBO
Ic= 100µA , IE=0
V(BR)CEO
IC= 1mA , IB=0
V(BR)EBO
IE= 100µA, IC=0
ICBO
VCB= 35V , IE=0
IEBO
VEB= 4V, IC=0
hFE
VCE=12V, IC= 2mA
VCE(sat)
IC= 10mA, IB= 1mA
VBE
IC= 10mA, IC= 1mA
fT
VCE= 5 V, IC= 10mA
C_ob
C_crbb’
G_pe
VCB=10V, IE= 0,f=1MHz
VCE=10V, IE=-1mA,
f=30MHz
VCC=6V,IE=-1mA
F=10.7MHz
MIN
35
30
4
40
100
1.4
10
27
TYP
2.0
29
MAX
0.1
0.1
240
0.4
1.0
3.2
50
33
UNIT
V
V
V
µA
µA
V
V
MHz
pF
ps
dB
CLASSIFICATION OF h_FE(1)
Rank
R
Range
40-80
WEJ ELECTRONIC CO.
O
70-140
Http:// www.wej.cn
Y
120-240
E-mail:[e-mail]