2SC3807 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-hFE, Low-Frequency General-Purpose Amp Applications

RoHS
2SC3807
2SC3807 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
1.25 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
2A
Collector-base voltage
O _V(BR)CBO:
30 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-126C
1. BASE
2. COLLECTOR
3. EMITTER
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter saturation voltage}
E _{Transition frequency}
J _{Collector output capacitance}
Fall time
WE^{Storage time}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
tf
ts
Test conditions
Ic=10µA, IE=0
Ic=1mA, IB=0
IE=10µA, IC=0
VCB=20V, IE=0
VEB=10V, IC=0
VCE=5V, IC=500mA
VCE=5V, IC=1A
IC=1A, IB=20mA
IC=1A, IB=20mA
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
Vcc=10V, Ic=0.7A
IB1=-IB2=0.1A
MIN TYP MAX UNIT
30
V
25
V
15
V
0.1 µA
0.1 µA
800
3200
600
0.5 V
1.2 V
260
MHz
27
pF
0.1
µS
1.35 µS
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