2SC3739 Datasheet, PDF (1/1 Pages) NEC – HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

RoHS
2SC3739
2SC3739 TRANSISTOR (NPN)
WEJ ^{ELECTRONIC CO.,LTD FEATURES}
Power dissipation
P_CM:
0.2 W (Tamb=25℃)
Collector current
I_CM:
0.5 A
Collector-base voltage
V_(BR)CBO:
60 V
Operating and storage junction temperature range
T_J,T_stg: -55℃ to +150℃
SOT-23-3L
1. EMITTER
2. BASE
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Ouput Capacitance
Turn-on Time
Storage Time
Turn-on Time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
Toff
Test conditions
Ic=100µA, IE=0
Ic= 1mA, IB=0
IE= 100µA, IC=0
VCB=40 V , IE=0
VEB= 4.0V , IC=0
VCE= 1.0V, IC= 150mA
VCE=2.0V, IC=500mA
IC=500 mA, IB= 50mA
IC=500mA, VCE=50V
VCE=10V, IC= 20mA
VCB=10V,IE=20mA
VCC=30V
IC=150mA
IB1=-IB2=15mA
MIN
60
40
5.0
75
20
200
TYP
150
75
0.25
1.0
400
3.5
MAX
0.1
0.1
300
UNIT
V
V
V
µA
µA
0.75
V
1.2
V
MHz
8.0
pF
35
ns
225
ns
275
ns
CLASSIFICATION OF hFE(1)
Marking
B12
B13
B14
Range
75-150
100-200
150-300
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