2SC3420 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

RoHS
2SC3420
2SC3420 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
1.5 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
Collector-base voltage
5A
O _V(BR)CBO:
50 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-126C
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter voltage}
E _{Transition frequency}
J _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=10mA, IB=0
IE=100µA, IC=0
VCB=40V, IE=0
VEB=8V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=4A
IC=4A, IB=0.1A
VCE=2V, IC=4A
VCE=2V, IC=0.5A
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
50
V
20
V
8
V
0.1 µA
0.1 µA
140
600
70
1
V
1.5 V
100
MHz
40
pF
E_{CLASSIFICATION OF hFE(1)}
W^Rank
Y
GR
BL
Range
140-240
200-400
300-600
Marking
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