2SC3356_15 Datasheet, PDF (1/1 Pages) Renesas Technology Corp – NPN Silicon RF Transistor

RoHS
2SC3356
2SC3356 TRANSISTOR (NPN)
D _FEATURES
T _{Power dissipation}
.,L ^PCM:
0.2 W (Tamb=25℃)
Collector current
I_CM:
0.1 A
O _{Collector-base voltage}
V_(BR)CBO: 20
V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Emitter cut-off current}
DC current gain
E _{Transition frequency}
L _{Noise figure}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
fT
NF
Test conditions
Ic=10µA, IE=0
Ic= 1mA, IB=0
IE= 10µA, IC=0
VCB= 10 V, IE=0
VEB= 1V , IC=0
VCE= 10V, IC= 20mA
VCE=10V, IC= 20mA
VCE=10V, IC= 7mA, f = 1GHz
MIN
20
12
3
50
6
TYP MAX UNIT
V
V
V
1 µA
1 µA
300
GHz
2
dB
J E CLASSIFICATION OF hFE
Marking
E_Rank
W_Range
R23
Q
50-100
R24
R
80-160
R25
S
125-250
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