2SC3279 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

RoHS
2SC3279
2SC3279 TRANSISTOR (NPN)
FEATURES
D _{Power dissipation}
T P_CM:
Collector current
0.75 W (Tamb=25℃)
.,L ^ICM:
2A
Collector-base voltage
V_(BR)CBO:
30 V
Operating and storage junction temperature range
O _{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
C _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
IC _{Collector-base breakdown voltage}
N _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
O _{Collector cut-off current}
R _{Emitter cut-off current}
T _{DC current gain}
C _{Collector-emitter saturation voltage}
E _{Base-emitter voltage}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
Test conditions
Ic=1mA , IE=0
IC=10mA , IB=0
IE=1mA, IC=0
VCB=30 V , IE=0
VEB=6 V , IC=0
VCE=1V, IC=0.5A
IC=2A, IB= 100mA
IC= 2A, VCE=1V
MIN MAX UNIT
30
V
10
V
6
V
0.1
µA
0.1
µA
140 600
0.8
V
1.5
V
L _{Transition frequency}
VCE=1V, IC= 0.5A
fT
100
f = 30MHz
MHz
E _{CLASSIFICATION OF hFE}
J _Rank
L
WE^Range
140-240
M
200-330
N
300-450
P
420-600
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