2SC3052_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulate Transistor

RoHS
2SC3052
2SC3052 TRANSISTOR (NPN)
D _FEATURES
T _{Power dissipation}
.,L ^PCM:
0.15 W (Tamb=25℃)
Collector current
I_CM:
0.2 A
O _{Collector-base voltage}
V_(BR)CBO:
50 V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Emitter cut-off current}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Test conditions
Ic=100µA, IE=0
Ic= 100µA, IB=0
IE=100µA, IC=0
VCB=50 V , IE=0
VEB= 6V , IC=0
MIN
TYP
50
50
6
E _{DC current gain}
EL _{Collector-emitter saturation voltage}
hFE(1)
hFE(2)
VCE(sat)
VCE=6V, IC=1mA
150
VCE=6V, IC=0.1mA
50
IC=100 mA, IB=10mA
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB=10mA
MAX UNIT
V
V
V
0.1
µA
0.1
µA
800
0.3
V
1
V
WEJ ^{Transition frequency}
fT
VCE=6V, IC= 10mA
180
MHz
CLASSIFICATION OF hFE₍₁₎
Marking
LE
LF
LG
Range
150-300
250-500
400-800
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