2SC2884_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

RoHS
2SC2884
2SC2884 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
0.5 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
0.8 A
Collector-base voltage
O _V(BR)CBO:
35 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter voltage}
E _{Transition frequency}
J _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=1mA, IE=0
Ic=10mA, IB=0
IE=1mA, IC=0
VCB=35V, IE=0
VEB=5V, IC=0
VCE=1V, IC=100mA
VCE=1V, IC=700mA
IC=500mA, IB=20mA
VCE=1V, IC=10mA
VCE=5V, IC=10mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
35
V
30
V
5
V
0.1 µA
0.1 µA
100
320
35
0.5 V
0.5
0.8 V
120
MHz
13
pF
E_{CLASSIFICATION OF hFE(1)}
W^Rank
O
Y
Range
100-200
160-320
Marking
PO1
PY1
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