2SC2873_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

RoHS
2SC2873
2SC2873 TRANSISTOR (NPN)
SOT-89
WEJ ELECTRONIC CO.,LTD FEATURES
Power dissipation
P_CM:
0.5 W (Tamb=25℃)
Collector current
I_CM:
2A
Collector-base voltage
V_(BR)CBO:
50 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-off time
Fall time
Storage time
CLASSIFICATION OF h_FE(1)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
ton
tf
ts
Test conditions
Ic=100µA, IE=0
Ic=10mA, IB=0
IE=100µA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=2A
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=500mA
VCB=10V, IE=0, f=1MHz
Vcc=30V, Ic=1A
IB1=-IB2=0.05A
MIN TYP MAX UNIT
50
V
50
V
5
V
0.1 µA
0.1 µA
70
240
20
0.5 V
1.2 V
120
MHz
30
pF
0.1
1.0
µS
0.1
Rank
O
Y
Range
70-140
120-240
Marking
MO
MY
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]