2SC2734 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

RoHS
2SC2734
2SC2734 TRANSISTOR (NPN)
D _FEATURES
T _{Power dissipation}
.,L ^{PCM :}
0.15 W (Tamb=25℃)
Collector current
I_CM:
0.05 A
O _{Collector-base voltage}
V_(BR)CBO:
20 V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
Symbol
V(BR)CBO
Test conditions
Ic=10µA, IE=0
MIN MAX
20
O _{Collector-emitter breakdown voltage}
V(BR)CEO
Ic= 1mA, IB=0
11
R _{Emitter-base breakdown voltage}
V(BR)EBO
IE= 10µA, IC=0
3
T _{Collector cut-off current}
ICBO
VCB= 10 V , IE=0
0.5
C _{DC current gain}
hFE
VCE= 10V, IC= 5mA
20 200
Collector-emitter saturation voltage
VCE(sat)
IC=10mA, IB= 5mA
0.7
E _{Transition frequency}
fT
VCE=10V, IC= 10mA
1.4
L _{Collector output capacitance}
Cob
VCB=10V, IE=0, f=1MHz
1.5
E _{Noise figure}
VCC=6V, Ic=2mA, fout=30MHz
NF
12
f=900MHZ, fosc= 930MHz
UNIT
V
V
V
µA
V
GHz
pF
dB
WEJ ^{Marking GC}
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