2SC2715 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH FREQUENCY AMPLIFIER APPLICATIONS)

RoHS
2SC2715
NPN EPITAXIAL SILICON TRANSISTOR
WEJ ELECTRONIC CO.,LTD AM/FM IF AMPLIFIER,LOCAL OSCILATOR
OF FM/VHF TUNER
High Current Gain Bandwidth
Product fT=600MHz
SOT-23
1
1.
2.4
1.3
3
2
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25^oC*
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
PD
Tj
Tstg
Rating
30
15
5
50
225
150
-55~150
(Ta=25 ^oC)
Unit
V
V
V
mA
mW
O
C
O_C
Electrical Characteristics
(Ta=25 ^oC)
Parameter
Symbol MIN. TYP. MAX. Unit
Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Capacitance
Collector-Gain-Bandwidth Product
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat)
Cob
fT
30
V _{IC=100 A IE=0}
15
V _{IC=1mA IB=0}
5
V IE=100 A IC=0
50 nA _{VCB=12V, VE=0}
50 nA _{VCB=3V, IC=0}
28 100 ³⁰⁰
VCB=5V, IC=1mA
0.5 V _{IC=10mA, IB=1mA}
1.3 ^1.7 PF VCB=10V, IE=10,f=1MHz
700 1100
MHz VCE=5V, IC=5mA
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25^oC
# _{Pulse Test: Pulse Width 300uS Duty cycle 2%}
DEVICE MARKING:
2SC2715=J8
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]