2SC2703 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)

RoHS
2SC2703
2SC2703 TRANSISTOR (NPN)
TO-92MOD
D FEATURES
Power dissipation
T _PCM:
0.9 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
Collector-base voltage
1A
O _V(BR)CBO:
30 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
LE _{Collector-emitter saturation voltage}
Base-emitter voltage
E _{Transition frequency}
J _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=1mA, IE=0
Ic=10mA, IB=0
IE=1mA, IC=0
VCB=30V, IE=0
VEB=5V, IC=0
VCE=2V, IC=100mA
VCE=2V, IC=800mA
IC=800mA, IB=80mA
VCE=2V, IC=800mA
VCE=2V, IC=100mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
30
V
30
V
5
V
0.1 µA
0.1 µA
100
320
40
0.5 V
1.5 V
150
MHz
13
pF
E_{CLASSIFICATION OF hFE(1)}
W^Rank
O
Y
Range
100-200
160-320
Marking
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]