2SC2655 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

RoHS
2SC2655
2SC2655 TRANSISTOR (NPN)
TO-92MOD
D _FEATURES
T _{Power dissipation}
.,L ^PCM:
900 mW (Tamb=25℃)
Collector current
I_CM:
2A
Collector-base voltage
O _V(BR)CBO:
50 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter saturation voltage}
E _{Transition frequency}
Collector output capacitance
J _{Tune on Time}
E_{Switch time}
Storage Time
W ^{Fall Time}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
Test conditions
Ic=100µA, IE=0
Ic=10mA, IB=0
IE=100µA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
VCE=2V, IC=500mA
VCE=2V, IC=1.5A
IC=1A, IB=0.05A
IC=1A, IB=0.05A
VCE=2V, IC=0.5A
VCB=10V, IE=0, f=1MHz
Vcc=30V, Ic=1A,
I_B1=-I_B2=0.05A
MIN TYP MAX UNIT
50
V
50
V
5
V
1
µA
1
µA
70
240
40
0.5 V
1.2 V
100
MHz
30
pF
0.1
1.0
µs
0.1
CLASSIFICATION OF h_FE(1)
Rank
Range
WEJ ELECTRONIC CO.
O
70-140
Http:// www.wej.cn
Y
120-240
E-mail:[e-mail]