2SC2482 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH VOLTAGE SWITCHING AND, COLOR TV HORIZ. DRIVER, CHROMA OUTPUT APPLICATIONS)

RoHS
2SC2482
2SC2482 TRANSISTOR (NPN)
D _FEATURE
T _{Power dissipation}
.,L ^PCM:
0.9 W (Tamb=25℃)
Collector current
I_CM:
0.1 A
O _{Collector-base voltage}
V_(BR)CBO:
300 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA , IE=0
300
O _{Collector-emitter breakdown voltage}
V(BR)CEO
IC= 3 mA , IB=0
300
R _{Emitter-base breakdown voltage}
V(BR)EBO
IE= 100µA, IC=0
7
T _{Collector cut-off current}
ICBO
VCB= 240 V , IE=0
C _{Collector cut-off current}
ICEO
VCB= 220 V , IB=0
Emitter cut-off current
IEBO
VEB= 7 V , IC=0
E _{DC current gain}
hFE(1)
VCE=10 V, IC= 20mA
30
L _{Collector-emitter saturation voltage}
VCE(sat)
IC= 10 mA, IB= 1 mA
E _{Base-emitter saturation voltage}
WEJ^{Transition frequency}
VBE(sat)
IC= 10 mA, IB= 1 mA
VCE= 10 V, IC= 20mA
fT
50
f = 30MHz
MAX
1
5
1
150
1
1
UNIT
V
V
V
µA
µA
µA
V
V
MHz
CLASSIFICATION OF hFE(1₎
Rank
O
Y
Range
30-90
90-150
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