2SC2412_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

RoHS
2SC2412
NPN EPITAXIAL SILICON TRANSISTOR
WEJ ELECTRONIC CO.,LTD PRF-AMPLIFIER,LOWLEVEL&LOWNOISE
Complemen to 2SA1037
Collector-current:Ic=100mA
Collector-Emiller Voltage:VCE=45V
High Totalpower Dissipation Pc=225mW
High life And Good Linearity
SOT-23
1
1.
2.4
1.3
3
2
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25 ^oC*
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
PD
Tj
Tstg
Rating
50
45
5
100
225
150
-55~150
(Ta=25 ^oC)
Unit
V
V
V
mA
mW
O_C
O
C
Electrical Characteristics
(Ta=25 ^oC)
Parameter
Symbol MIN. TYP. MAX. Unit
Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat)
VBE(sat)
VBE(on)
Cob
fT
NF
50
V _{IC=100 A IE=0}
45
V _{IC=1mA IB=0}
5
V IE=100 A IC=0
50 nA VCB=50V, VC=0
50 nA VCB=5V, IC=0
60 300 1000
VCE=5V, IC=1mA
0.3 V IC=100mA, IB=5mA
1.00 V IC=100mA, IB=5mA
0.58 0.63 ^{6.7 V} VCe=5V, IC=2mA
2.2 3.5 PF VCB=10V, IE=10mA,f=100MHz
150 270
MHz _{VCE=5V IC=10mA}
10 dB VCE=5V IC=0.2mA
f=1MHz Rs=2Kohm
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25 ^oC
# _{Pulse Test: Pulse Width 300uS Duty cycle 2%}
DEVICE MARKING:
2SC2412=F14
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]