2SC2411K_15 Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – TRANSISTOR (NPN)

RoHS
2SC2411K
2SC2411K TRANSISTOR (NPN)
D _FEATURES
T _{Power dissipation}
.,L ^PCM:
200 mW (Tamb=25℃)
Collector current
I_CM:
500 mA
Collector-base voltage
O _{V(BR)CBO: 40 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
Collector-emitter saturation voltage
E _{Transition frequency}
L _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=20V, IE=0
VEB=4V, IC=0
VCE=3V, IC=100mA
IC=500mA, IB=50mA
VCE=5V, IC=20mA, f=100MHz
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
40
V
32
V
5
V
1
µA
1
µA
82
390
0.4 V
250
MHz
6.0
pF
E _{CLASSIFICATION OF hFE}
J_Rank
Range
WE^Marking
P
82-180
CP
Q
120-270
CQ
R
180-390
CR
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]