2SC2236 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)

RoHS
2SC2236
2SC2236 TRANSISTOR (NPN)
D _FEATURE
T _{Power dissipation}
.,L ^PCM:
0.9
W (Tamb=25℃)
Collector current
I_CM:
1.5
A
O _{Collector-base voltage}
V_(BR)CBO:
30
V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Symbol
Collector-base breakdown voltage V(BR)CBO
O _{Collector-emitter}
voltage
breakdown
V(BR)CEO
R _{Emitter-base breakdown voltage}
V(BR)EBO
T _{Collector cut-off current}
ICBO
C _{Emitter cut-off current}
IEBO
E _{DC current gain}
Collector-emittersaturation voltage
hFE(1)
VCE(sat)
L _{Base-emitter voltage}
VBE
E _{Transition frequency}
fT
Test conditions
Ic= 1mA , IE=0
IC= 10 mA , IB=0
IE= 1mA, IC=0
VCB=30V , IE=0
VEB=5V , IC=0
VCE=2 V, IC= 500mA
IC= 1.5 A, IB= 0.03A
IC= 500 mA, VCE= 2V
VCE= 2V, IC= 500mA
MIN TYP MAX
30
30
5
0.1
0.1
100
320
2
1
120
J_{Collector output Capacitance}
C_ob
VCB= 10V, IE= 0,f=1MHz
30
UNIT
V
V
V
µA
µA
V
V
MHz
pF
E_{CLASSIFICATION OF hFE(1)}
W^Rank
O
Y
Range
100-200
160-320
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