2SC2230 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH VOLTAGE GENERAL AMPLIFIER, COLOR TV CLASS B SOUND OUTPUT APPLICATIONS)

RoHS
2SC2230
2SC2230 TRANSISTOR (NPN)
D _FEATURE
T _{Power dissipation}
.,L ^PCM:
0.8 W (Tamb=25℃)
Collector current
I_CM:
0.1 A
O _{Collector-base voltage}
V_(BR)CBO: 200 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA , IE=0
200
O _{Collector-emitter breakdown voltage}
V(BR)CEO
IC= 10 mA , IB=0
160
R _{Emitter-base breakdown voltage}
V(BR)EBO
IE= 10µA, IC=0
5
T _{Collector cut-off current}
ICBO
VCB=200V, IE=0
C _{Collector cut-off current}
ICER
VCB=160 V , REB= 10MΩ
Emitter cut-off current
IEBO
VEB=5V, IC=0
E _{DC current gain}
hFE
VCE=10 V, IC= 10mA
120
L _{Collector-emitter saturation voltage}
VCE(sat)
IC= 50m A, IB= 5mA
E _{Base-emitter voltage}
VBE
IC= 1 mA, VCE= 10V
J_{Transition frequency}
fT
VCE= 10 V, IC= 10mA
50
MAX
0.1
10
0.1
400
0.5
0.7
UNIT
V
V
V
µA
µA
µA
V
V
MHz
E_{CLASSIFICATION OF hFE}
W^Rank
Y
GR
Range
120-240
200-400
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