2SC2229 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (BLACK AND WHITE TV VIDEO OUTPUT, HIGH VOLTAHE SWITCHING, DRIVER STAGE AUDIO AMPLIFIER APPLICATIONS)

RoHS
2SC2229
2SC2229 TRANSISTOR (NPN)
D FEATURE
Power dissipation
T _PCM:
0.8 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
0.05 A
Collector-base voltage
O _V(BR)CBO:
200 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
N _{Collector-base breakdown voltage}
V(BR)CBO
Ic= 100µA , IE=0
200
O _{Collector-emitter breakdown voltage}
V(BR)CEO
IC= 1mA, IB=0
150
Emitter-base breakdown voltage
V(BR)EBO
IE= 100µA, IC=0
5
R _{Collector cut-off current}
ICBO
VCB=200V, IE=0
T _{Collector cut-off current}
ICER
VCB=150 V , REB= 10MΩ
C _{Emitter cut-off current}
IEBO
VEB=5V, IC=0
E _{DC current gain}
hFE
VCE=5 V, IC= 10mA
70
L _{Collector-emitter saturation voltage}
VCE(sat)
IC= 10m A, IB= 1mA
Base-emitter voltage
J ^{E Transition frequency}
VBE(sat)
IC= 10 mA, IB= 1mA
VCE= 30 V, IC= 10mA
fT
80
f = 30MHz
MAX
0.1
1
0.1
240
0.5
1
E_{CLASSIFICATION OF hFE}
W^Rank
O
Y
UNIT
V
V
V
µA
µA
µA
V
V
MHz
Range
70-140
120-240
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