2SC2223 Datasheet, PDF (1/1 Pages) NEC – HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

RoHS
2SC2223
2SC2223 TRANSISTOR (NPN)
D _FEATURES
T _{Power dissipation}
.,L ^PCM:
150 mW (Tamb=25℃)
Collector current
I_CM:
20 mA
Collector-base voltage
O _V(BR)CBO:
30 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
Collector-emitter saturation voltage
E _{Base-emitter voltage}
L _{Transition frequency}
E _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=25V, IE=0
VEB=3V, IC=0
VCE=6V, IC=1mA
IC=10mA, IB=1mA
VCE=6V, IC=1mA
VCE=6V, IC=1mA
VCB=6V, IE=0, f=1MHz
MIN TYP MAX UNIT
30
V
20
V
4
V
0.1 µA
0.1 µA
40
180
0.3 V
0.72
V
400
MHz
1
pF
J_{Noise figure}
VCE=6V, Ic=1mA,
NF
f=100MHZ, Rg=50Ω
3
dB
E_{CLASSIFICATION OF hFE(1)}
W^Rank
F12
F13
F14
Range
40-80
60-120
90-180
Marking
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