2SC2216 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS)

RoHS
2SC2216
WEJ ^{ELECTRONIC CO.,LTD 2SC2216 TRANSISTOR(NPN)}
FEATURES
Power dissipation
P_CM:
300 mW (Tamb=25℃)
Collector current
I_CM:
50 mA
Collector-base voltage
V_(BR)CBO :
50 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO—92
1. BASE
2. EMITTER
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
Collector-base breakdown voltage
V(BR)_CBO
Ic= 100µA, I_E=0
50
Collector-emitter breakdown voltage
V(BR)_CEO
Ic= 10 mA , I_B=0
45
Emitter-base breakdown voltage
V(BR)_EBO
I_E= 100µA, I_C=0
4
Collector cut-off current
I_CBO
V_CB=50 V I_E=0
0.1
Emitter cut-off current
I_EBO
V_EB= 3 V, I_C=0
0.1
DC current gain
h_FE
V_CE=12.5V, I_C=12.5 mA 40
140
Collector-emitter saturation voltage
V_CE (sat)
I_C= 15mA, I_B=1.5 mA
0.2
Bass-emitter saturation voltage
V_BE (sat)
I_C= 15mA, I_B=1.5 mA
1.5
Transition frequency
f_T
V_CE=12.5 V, I_C=12.5mA
f = 100 MHz
300
UNIT
V
V
V
µA
µA
V
V
MHz
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