2SC2073 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.5A,150V,25W)

RoHS
2SC2073
2SC2073 TRANSISTOR (NPN)
D _FEATURES
T _{Power dissipation}
.,L ^PCM:
1.5 W (Tamb=25℃)
Collector current
I_CM:
1.5 A
Collector-base voltage
O _V(BR)CBO:
150 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
O _{Collector-base breakdown voltage}
Collector-emitter breakdown voltage
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Emitter cut-off current}
E DC current gain
Collector-emitter saturation voltage
L _{Base-emitter voltage}
E _{Transition frequency}
WEJ^{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=120V, IE=0
VEB=5V, IC=0
VCE=10V, IC=500mA
IC=500mA, IB=50mA
VCE=10V, IC=500mA
VCE=10V, IC=500mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
150
V
150
V
5
V
10 µA
10 µA
40
140
1.5 V
0.65
0.85 V
4
MHz
35
pF
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