2SC2001 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors

RoHS
2SC2001
2SC2001 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
Collector current
.,L ^ICM:
Collector-base voltage
V_(BR)CBO:
0.6 W (Tamb=25℃)
0.7 A
30 V
O _{Operating and storage junction temperature range}
C _{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
Collector cut-off current
C _{Emitter cut-off current}
E _{DC current gain}
L _{Collector-emitter saturation voltage}
E _{Base-emitter saturation voltage}
J_{Transition frequency}
E_{CLASSIFICATION OF hFE}
WRank
M
Symbol Test conditions
V(BR)CBO
Ic=100µA , IE=0
V(BR)CEO
IC=10mA , IB=0
V(BR)EBO
IE=100µA, IC=0
ICBO
VCB=30 V , IE=0
ICEO
VCE=20 V , IB=0
IEBO
VEB=5 V , IC=0
hFE
VCE=1V, IC=100mA
VCE(sat)
IC=700mA, IB= 70mA
VBE(sat)
fT
IC= 700mA, IB=70mA
VCE=6V, IC= 10mA
f = 30MHz
MIN MAX UNIT
30
V
25
V
5
V
0.1
µA
0.1
µA
0.1
µA
90
400
0.6
V
1.2
V
50
MHz
L
K
Range
90-180
135-270
200-400
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]