2SC1815LT1_15 Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – NPN EPITAXIAL SILICON TRANSISTOR

RoHS
2SC1815LT1
NPN EPITAXIAL SILICON TRANSISTOR
WEJ ELECTRONIC CO.,LTD * Complement to 2SA1015
* Collector Current :Ic=150mA
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating
Collector-Base Voltage
Vcbo
60
Collector-Emitter Voltage
Vceo
50
Emitter-Base Voltage
Vebo
5
Collector Current
Ic
Collector Dissipation Ta=25 *
P_D
225
Junction Temperature
Tj
150
Storage Temperature
Tstg -55-150
Unit
V
V
V
mA
mW
1.
2.4
1.3
1.BASE
2.EMITTER
3 . C OL L E C TO R
Unit:mm
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage BVcbo 60
V Ic=100uA Ie=0
Collector-Emitter
Breakdown BVceo 50
V Ic= 1mA Ib=0
Voltage#
Emitter-Base Breakdown Voltage
BVebo 5.0
V Ie= 100uA Ic=0
Collector-Base Cutoff Current
Icbo
100 nA Vcb= 50V Ie=0
Emitter-Base Cutoff Current
Iebo
100 nA Veb= 3V Ic= 0
DC Current Gain
Hfe
70
700
Vce= 6V Ic= 2mA
Collector-Emitter Saturation Voltage Vce(sat)
0.30 V Ic= 100mA Ib= 10mA
* Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 .
# Pulse Test : Pulse Width 300uS,Duty cycle 2%
DEVICE MARKING:
2SC1815=L6
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]