2SC1674 Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – TO-92 Plastic-Encapsulated Transistors

RoHS
2SC1674
2SC1674 _D TRANSISTOR (NPN)
TO-92
T FEATURE
Power dissipation
1. EMITTER
.,L ^PCM:
0. 25 W (Tamb=25℃)
2. COLLECTOR
Collector current
I_CM:
0.02 A
O _{Collector-base voltage}
V_(BR)CBO:
30 V
C _{Operating and storage junction temperature range}
3. BASE
.
123
T_J, T_stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
IC _Parameter
Symbol
Test conditions
MIN MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA , IE=0
30
V
N _{Collector-emitter breakdown voltage}
V(BR)CEO
IC= 1 mA, IB=0
20
V
O _{Emitter-base breakdown voltage}
R _{Collector cut-off current}
V(BR)EBO
ICBO
IE= 100µA, IC=0
VCB= 30V, IE=0
4
V
0.1
µA
Emitter cut-off current
IEBO
VEB=3V , IC=0
0.1
µA
T _{DC current gain}
hFE
VCE=6 V, IC= 1mA
40
180
C _{Collector-emitter saturation voltage}
VCE(sat)
IC=10 mA, IB= 1 mA
0.3
V
E _{Base-emitter voltage}
VBE(ON)
VCE=6 V, IC= 1mA
0.72
V
L _{Transition frequency}
fT
VCE=6 V, IC= 1mA
400
MHz
E _{Collector output capacitance}
Noise figure
J_{Power gain}
C_ob
VCE=6V, IE=0, f=1MHz
1.5
pF
NF
VCE=6V, IC=1mA, f=100MHz,
RS=50Ω
5
dB
G_P
VCE=6V,IC=1mA,f=100MHz
18
dB
WE^{CLASSIFICATION OF hFE(1)}
Rank
Y
GR
BL
Range
40-80
60-120
90-180
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