2SC1627A Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (ERIVER STAGE, VOLTAGE AMPLIFIER APPLICATIONS)

RoHS
2SC1627A
2SC1627A TRANSISTOR (NPN)
D _FEATURE
T _{Power dissipation}
.,L ^PCM:
0.8 W (Tamb=25℃)
Collector current
I_CM:
0.4 A
O _{Collector-base voltage}
V_(BR)CBO: 80 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Emitter cut-off current}
E _{DC current gain}
L _{Collector-emitter saturation voltage}
E _{Base-emitter voltage}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(on)
Test conditions
Ic= 100µA , IE=0
IC=5mA, IB=0
IE= 100µA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
VCE=2 V, IC= 50mA
VCE=2 V, IC= 200mA
IC= 200m A, IB= 20mA
VCE= 2V, IC= 5mA
MIN
80
80
5
70
40
0.55
J_{Transition frequency}
fT
VCE= 10 V, IC= 10mA
80
MAX
0.1
0.1
240
0.4
0.8
UNIT
V
V
V
µA
µA
V
V
MHz
WE^{CLASSIFICATION OF hFE (1)}
Rank
O
Y
Range
70-140
120-240
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