2SC1623 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

RoHS
2SC1623
2SC1623 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _{PCM: 200 mW (Tamb=25℃)}
.,L ^{Collector current}
I_CM: 100 mA
Collector-base voltage
O _{V(BR)CBO: 60 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
IC ^{ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter saturation voltage}
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
VCE=6V, IC=1mA
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=10mA
MIN TYP MAX UNIT
60
V
50
V
5
V
0.1 µA
0.1 µA
90
600
0.3 V
1
V
250
MHz
E _{CLASSIFICATION OF hFE(1)}
J _Rank
L4
E_Range
90-180
W^Marking
L4
L5
135-270
L5
L6
200-400
L6
L7
300-600
L7
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]