2SC1213-A Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – TRANSISTOR (NPN)

RoHS
2SC1213/A
2SC1213 TRANSISTOR (NPN)
TO-92
2SC1213A ^D _FEATURE
T _{Power dissipation}
.,L ^PCM:
0.4 W (Tamb=25℃)
Collector current
I_CM:
0.5 A
O _{Collector-base voltage}
C ^V(BR)CBO:
2SC1213 : 35 V
2SC1213A : 50 V
Operating and storage junction temperature range
IC ^{TJ, Tstg: -55℃ to +150℃}
1. EMITTER
2. COLLECTOR
3. BASE
123
N _{ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)}
O _Parameter
Collector-base breakdown voltage 2SC1213
R _2SC1213A
T _{Collector-emitter breakdown voltage 2SC1213}
2SC1213A
C _{Emitter-base breakdown voltage}
E _{Collector cut-off current}
EL ^{DC current gain}
Symbol Test conditions
V(BR)CBO
Ic= 10µA , IE=0
V(BR)CEO
IC= 1 mA , IB=0
V(BR)EBO
IE=10µA, IC=0
ICBO
VCB= 20V , IE=0
hFE(1)
VCE=3V, IC= 10mA
hFE(2)
VCE=3V, IC= 500mA
MIN
35
50
35
50
4
60
10
TYP
MAX UNIT
V
V
V
0.5
µA
320
Collector-emitter saturation voltage
J _{Base-emitter voltage}
VCE(sat)
VBE
IC= 150mA, IB= 15 mA
VCE= 3V, IC= 10 mA
0.2
0.6
V
0.75
V
WE^{CLASSIFICATION OF hFE(1)}
Rank
B
C
D
Range
60-120
100-200
160-320
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]