2SC1008 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TRANSISTOR NPN

RoHS
2SC1008
2SC1008 TRANSISTOR (NPN)
D _FEATURES
T _{Power dissipation}
.,L ^PCM:
0.8 W (Tamb=25℃)
Collector current
I_CM:
0.7
A
O _{Collector-base voltage}
V_(BR)CBO:
80
V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
NIC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
O _Parameter
Symbol
Test conditions
MIN
R Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA , IE=0
80
Collector-emitter breakdown voltage
V(BR)CEO
IC= 10mA , IB=0
60
T _{Emitter-base breakdown voltage}
V(BR)EBO
IE= 10µA, IC=0
8
C _{Collector cut-off current}
ICBO
VCB=60 V , IE=0
E _{Emitter cut-off current}
IEBO
VEB= 5 V , IC=0
L _{DC current gain}
hFE
VCE= 2 V, IC=50mA
40
E _{Collector-emitter saturation voltage}
VCE(sat)
IC= 500mA, IB=50 mA
Base-emitter saturation voltage
VBE(sat)
IC=500mA, IB=50mA
J _{Transition frequency}
fT
VCE=10V, IC= 50mA
30
TYP
MAX
0.1
0.1
400
0.4
1.1
UNIT
V
V
V
µA
µA
V
V
MHz
WE^{CLASSIFICATION OF hFE}
Rank
R
O
Y
G
Range
40-80
70-140
120-240
200-400
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]