2SB985 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – Large-Current Driving Applications

RoHS
2SB985
2SB985 TRANSISTOR (PNP)
TO-92MOD
D FEATURES
Power dissipation
T _PCM:
1 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
-3 A
Collector-base voltage
O _V(BR)CBO:
-60 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
LE _{Collector-emitter saturation voltage}
Base-emitter saturation voltage
E _{Transition frequency}
J _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
Ic=-10µA, IE=0
Ic=-1mA, IB=0
IE=-10µA, IC=0
VCB=-40V, IE=0
VEB=-4V, IC=0
VCE=-2V, IC=-100mA
VCE=-2V, IC=-3A
IC=-2A, IB=-100mA
IC=-2A, IB=-100mA
VCE=-10V, IC=-50mA
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-60
V
-50
V
-6
V
-1
µA
-1
µA
100
560
40
-0.7 V
-1.2 V
100
MHz
50
pF
E_{CLASSIFICATION OF hFE(1)}
W^Rank
R
S
T
U
Range
100-200
140-280
200-400
280-560
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]