2SB892 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – Large-Current Switching Applications

RoHS
2SB892
2SB892 TRANSISTOR (PNP)
D _FEATURE
T _{Power dissipation}
.,L ^PCM:
1 W (Tamb=25℃)
Collector current
I_CM:
-2 A
O _{Collector-base voltage}
V_(BR)CBO:
-60 V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Symbol
Test conditions
MIN
O _{Collector-base breakdown voltage}
V(BR)CBO
Ic= -10µA , IE=0
-60
R _{Collector-emitter breakdown voltage V(BR)CEO}
IC= -1mA , IB=0
-50
T Emitter-base breakdown voltage
V(BR)EBO
IE=- 100µA, IC=0
-6
Collector cut-off current
ICBO
VCB= -50V , IE=0
C _{Emitter cut-off current}
IEBO
VEB= -4V , IC=0
LE _{DC current gain}
HFE(1)
VCE=-2V, IC= -100mA
100
HFE(2)
VCE=-2V, IC= -1.5A
40
E _{Collector-emitter saturation voltage}
J _{Base-emitter saturation voltage}
VCE(sat)
VBE(sat)
IC= -1A, IB= -50mA
IC= -1A, IB= -50mA
WE^{Transition frequency}
fT
VCE= -10 V, IC= -50mA
150
MAX
-0.1
-0.1
560
-0.4
-1.2
UNIT
V
V
V
µA
µA
V
V
MHz
CLASSIFICATION OF h_FE(1)
Rank
R
S
T
U
Range
100-200
140-280
200-400
280-560
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