2SB834 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(3.0A,60V,30W)

RoHS
2SB834
2SB834 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _PCM:
1.5 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
-3 A
Collector-base voltage
O _V(BR)CBO:
-60 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter voltage}
E _{Transition frequency}
J _{Collector output capacitance}
Turn-on Time
WE^{Storage Time}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
ton
tstg
Test conditions
Ic=-100µA, IE=0
Ic=-50mA, IB=0
IE=-100µA, IC=0
VCB=-60V, IE=0
VEB=-7V, IC=0
VCE=-5V, IC=-500mA
VCE=-5V, IC=-3A
IC=-3A, IB=-0.3A
VCE=-5V, IC=-500mA
VCE=-5V,I C=-500mA
VCB=-10V, IE=0, f=1MHz
VCC=-30V, Ic=-2A,
IB!=IB2=-0.2A
MIN TYP MAX UNIT
-60
V
-60
V
-7
V
-100 µA
-100 µA
60
200
20
-1
V
-1
V
9
MHz
150
pF
0.4
µs
1.7
µs
Turn-off Time
toff
0.5
µs
CLASSIFICATION OF h_FE(1)
Rank
Range
WEJ ELECTRONIC CO.
O
60-120
Http:// www.wej.cn
Y
100-200
E-mail:[e-mail]