2SB766_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

RoHS
2SB766
2SB766 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _PCM:
500 mW (Tamb=25℃)
.,L ^{Collector current}
I_CM:
-1 A
Collector-base voltage
O _V(BR)CBO:
-30 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter saturation voltage}
E _{Transition frequency}
J _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
Ic=-10µA, IE=0
Ic=-2mA, IB=0
IE=-10µA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
VCE=-10V, IC=-500mA
VCE=-5V, IC=-1A
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-50mA, f=200MHz
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-30
V
-25
V
-5
V
-0.1 µA
-0.1 µA
85
340
50
-0.2 -0.4 V
-0.85 -1.2 V
200
MHz
20
30
pF
E_{CLASSIFICATION OF hFE(1)}
W^Rank
Q
R
S
Range
85-170
120-240
170-340
Marking
AQ
AR
AS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]