2SB740 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

RoHS
2SB740
2SB740 TRANSISTOR (PNP)
D _FEATURE
T _{Power dissipation}
.,L ^PCM:
0.9
W (Tamb=25℃)
Collector current
I_CM:
-1
A
O _{Collector-base voltage}
V_(BR)CBO:
-70
V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Symbol
Test conditions
MIN
O _{Collector-base breakdown voltage}
V(BR)CBO
Ic= -10µA , IE=0
-70
R _{Collector-emitter breakdown voltage}
V(BR)CEO
IC=-1mA , IB=0
-50
T Emitter-base breakdown voltage
V(BR)EBO
IE= -10µA, IC=0
-6
Collector cut-off current
ICBO
VCB= -55 V, IE=0
C _{Emitter cut-off current}
IEBO
VEB= -6 V, IC=0
E _{DC current gain}
hFE
VCE=-2 V, IC= -100mA
100
L _{Collector-emitter saturation voltage}
VCEsat
IC= -1A, IB=-100mA
MAX
-1
-0.2
320
-0.6
E _{Transition frequency}
fT
VCE=-2V, IC= -10mA
100
J _{Output capacitance}
C_ob
VCE=-10V, IE=0, f=1 MHz
45
WE^{CLASSIFICATION OF hFE}
UNIT
V
V
V
µA
µA
V
MHz
pF
Rank
B
C
Range
100-200
160-320
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