2SB624 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

RoHS
2SB624
2SB624 TRANSISTOR (PNP)
D _FEATURES
T _{Power dissipation}
.,L ^PCM:
0.2 W (Tamb=25℃)
Collector current
I_CM:
-0.7 A
O _{Collector-base voltage}
V_(BR)CBO:
-30 V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
NIC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
O _Parameter
Collector-base breakdown voltage
R _{Collector-emitter breakdown voltage}
T _{Emitter-base breakdown voltage}
C _{Collector cut-off current}
E _{Emitter cut-off current}
L _{DC current gain}
E _{Collector-emitter saturation voltage}
J _{Base-emitter voltage}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)*
hFE(2)*
VCE(sat) *
VBE(on) *
Test conditions
Ic=-100µA, IE=0
Ic= -1 mA, IB=0
IE= -100 µA, IC=0
VCB=-30 V , IE=0
VEB= -5V , IC=0
VCE= -1V, IC= -100mA
VCE=-1V, IC= -700mA
IC=-700 mA, IB= -70mA
VCE=-6V, IC=-10mA
MIN
-30
-25
-5
110
50
-0.6
TYP
WE^{Transition frequency}
fT
VCE= -6V, IC= -10mA
140
MAX UNIT
V
V
V
-0.1
µA
-0.1
µA
400
-0.6
V
-0.7
V
MHz
* Pulse test : Pulse width ≤350µs,Duty Cycle≤2%.
CLASSIFICATION OF hFE₍₁₎
Marking
BV1
Range
110-180
WEJ ELECTRONIC CO.
BV2
135-220
BV3
170-270
BV4
200-320
BV5
250-400
Http:// www.wej.cn E-mail:[e-mail]