2SB562 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

RoHS
2SB562
2SB562 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _PCM:
900 mW (Tamb=25℃)
.,L ^{Collector current}
I_CM:
-1 A
Collector-base voltage
O _V(BR)CBO:
-25 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Emitter cut-off current}
DC current gain
E _{Collector-emitter saturation voltage}
L _{Base-emitter voltage}
E _{Transition frequency}
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=-10µA, IE=0
Ic=-1mA, IB=0
IE=-10µA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
VCE=-2V, IC=-0.5A
IC=-0.8A, IB=-0.08A
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-0.5A
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-25
V
-20
V
-5
V
-1
µA
-1
µA
85
240
-0.5 V
-1
V
350
MHz
38
pF
EJ _{CLASSIFICATION OF hFE(1)}
Rank
W_Range
B
85-170
C
120-240
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