2SB1658 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS

RoHS
2SB1658
2SB1658 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _PCM:
1 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
-5 A
Collector-base voltage
O _{V(BR)CBO: -30 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-126
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
O _{Collector-base breakdown voltage}
R _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
T _{Collector cut-off current}
C _{Emitter cut-off current}
LE ^{DC current gain}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
E _{Collector-emitter saturation voltage}
VCE(sat)
J _{Base-emitter saturation voltage}
E _{Transition frequency}
W^{Collector output capacitance}
VBE(sat)
fT
Cob
Test conditions
Ic=-0.1mA, IE=0
Ic=-1mA, IB=0
IE=-0.1mA, IC=0
VCB=-30V, IE=0
VEB=-6V, IC=0
VCE=-2V, IC=-1A
VCE=-2V, IC=-4A
IC=-1A, IB=-50mA
IC=-2A, IB=-100mA
IC=-4A, IB=-200mA
IC=-1A, IB=-100mA
VCE=-10V, IC=-50mA
VCB=-10V, IE=0, f=1MHz
MIN
TYP
-30
-30
-6
150
50
95
100
MAX
-0.1
-0.1
600
-0.15
-0.25
-0.5
-1.5
UNIT
V
V
V
µA
µA
V
V
MHz
pF
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