2SB1424 Datasheet, PDF (1/1 Pages) Rohm – Low Vce(sat) Transistor (-20V, -3A)

RoHS
2SB1424
2SB1424 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _PCM:
600 mW (Tamb=25℃)
.,L ^{Collector current}
I_CM:
-3 A
Collector-base voltage
O _V(BR)CBO:
-20 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
Emitter cut-off current
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Transition frequency}
E _{Collector output capacitance}
Symbol
Test conditions
V(BR)CBO
Ic=-50µA, IE=0
V(BR)CEO
Ic=-1mA, IB=0
V(BR)EBO
IE=-50µA, IC=0
ICBO
VCB=-20V, IE=0
IEBO
VEB=-5V, IC=0
hFE(1)
VCE=-2V, IC=-100mA
VCE(sat)
IC=-2A, IB=-100mA
fT
VCE=-2V, IC=-500mA, f=100MHz
Cob
VCB=-10V, IE=0, f=1MHz
MIN
-20
-20
-6
120
TYP MAX UNIT
V
V
V
-0.1 µA
-0.1 µA
390
-0.5 V
240
MHz
35
pF
J _{CLASSIFICATION OF hFE(1)}
E_Rank
WRange
Q
120-270
R
180-390
Marking
AEQ
AER
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