2SB1322A Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency power amplification)

RoHS
2SB1322A
2SB1322A TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _PCM:
1 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
-1 A
Collector-base voltage
O _V(BR)CBO:
-60 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
Emitter cut-off current
EC _{DC current gain}
L _{Collector-emitter saturation voltage}
E _{Base-emitter saturation voltage}
Transition frequency
J _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
Ic=-10µA, IE=0
Ic=-2mA, IB=0
IE=-10µA, IC=0
VCB=-20V, IE=0
VEB=-5V, IC=0
VCE=-10V, IC=-0.5A
VCE=-5V, IC=-1A
IC=-0.5A, IB=-50mA
IC=-0.5A, IB=-50mA
VCE=-10V, IC=-50mA
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-60
V
-50
V
-5
V
-0.1 µA
-0.1 µA
85
340
50
-0.4 V
-1.2 V
200
MHz
30
pF
WE^{CLASSIFICATION OF hFE(1)}
Rank
Q
R
S
Range
85-170
120-240
170-340
Marking
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]