2SB1308 Datasheet, PDF (1/1 Pages) Rohm – Power Transistor (-50V, -3A)

RoHS
2SB1308
2SB1308 TRANSISTOR (PNP)
D _FEATURES
Power dissipation
T _PCM:
0.5
Collector current
.,L ^ICM:
-3
Collector-base voltage
V_(BR)CBO:
-30
W (Tamb=25℃)
A
V
O _{Operating and storage junction temperature range}
C T_J, T_stg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR1
2
3. EMITTER
3
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Emitter cut-off current}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Test conditions
Ic=-50µA , IE=0
IC= -1mA , IB=0
IE=-50µA, IC=0
VCB=-20 V , IE=0
VEB=-5 V , IC=0
MIN MAX UNIT
-30
V
-20
V
-6
V
-0.5
µA
-0.5
µA
E _{DC current gain}
L Collector-emitter saturation voltage
E Transition frequency
* Measured using pulse current.
J _{CLASSIFICATION OF hFE}
Rank
WE^Range
P
82-180
hFE *
VCEsat *
fT
VCE=-2V, IC= -0.5A
IC=-1.5A, IB= -0.15A
VCE= -6V, IC=-50mA
f =30MHz
82
390
-0.45
V
50
MHz
Q
120-270
R
180-390
Marking
BFP,BFQ,BFR
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