2SB1260_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

RoHS
2SB1260
WEJ ^{ELECTRONIC CO.,LTD 2SB1260 TRANSISTOR(PNP)}
FEATURES
Power dissipation
P_CM:
0.5
Collector current
I_CM:
-1
Collector-base voltage
V_(BR)CBO:
-80
W (Tamb=25℃)
A
V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR ₁
3. EMITTER
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Test conditions
Ic=-50µA , IE=0
IC= -1mA , IB=0
IE=-50µA, IC=0
VCB=-60 V , IE=0
VEB=-4 V , IC=0
MIN MAX UNIT
-80
V
-80
V
-5
V
-1
µA
-1
µA
DC current gain
Collector-emitter saturation voltage
Transition frequency
hFE
VCE=-3V, IC= -0.1A
82
VCE(sat) IC=-500 mA, IB= -50mA
VCE= -5V, IC=- 50mA
fT
80
f = 30MHz
390
-0.4
V
MHz
CLASSIFICATION OF hFE
Rank
Range
P
82-180
Q
120-270
R
180-390
Marking
ZL
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]