2SB126-Z Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – TRANSISTOR (PNP)

RoHS
2SB1261-Z
2SB1261-Z TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _PCM:
2 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
-3 A
Collector-base voltage
O _V(BR)CBO:
-60 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-252
1. BASE
2. COLLECTOR
3. EMITTER
1 23
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
Ic=-100µA, IE=0
-60
O _{Collector-emitter breakdown voltage}
V(BR)CEO
Ic=-1mA, IB=0
-60
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA, IC=0
-7
R _{Collector cut-off current}
ICBO
VCB=-60V, IE=0
T _{Emitter cut-off current}
IEBO
VEB=-7V, IC=0
hFE(1)
VCE=-2V, IC=-200mA
60
C _{DC current gain}
hFE(2)
VCE=-2V, IC=-600mA
100
E _hFE(3)
VCE=-2V, IC=-2A
Collector-emitter saturation voltage
VCE(sat)
IC=-1.5A, IB=-150mA
L _{Base-emitter saturation voltage}
VBE(sat)
IC=-1.5A, IB=-150mA
E _{Transition frequency}
fT
VCE=-5V, IC=-1.5A
Collector output capacitance
Cob
VCB=-1.0V, IE=0, f=1MHz
J _{Turn on Time}
ton
Switching Time
Storage Time
tstg
VCC=-10V, IC=-1A, IB1=-IB2=-0.1A
WE ^{Fall Time}
tf
TYP
50
120
30
0.5
2.0
0.5
MAX
-10
-10
UNIT
V
V
V
µA
µA
400
-0.3 V
-1.2 V
MHz
pF
µs
CLASSIFICATION OF h_FE(1)
Rank
M
L
K
Range
100-200
160-320
200-400
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