2SB1199 Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – ELECTRICAL CHARACTERISTICS

RoHS
2SB1199
2SB1119 TRANSISTOR (PNP)
FEATURES
Power dissipation
D _PCM:
500 mW (Tamb=25℃)
T _{Collector current}
.,L ^ICM:
-1 A
Collector current (Pulse)
ICP:
-2 A
Collector-base voltage
O _V(BR)CBO:
-25 V
Operating and storage junction temperature range
C _{TJ,Tstg: -55℃ to +150℃}
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Emitter cut-off current}
E _{DC current gain}
L _{Collector-emitter saturation voltage}
E _{Base-emitter saturation voltage}
J _{Transition frequency}
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(SAT)
fT
Cob
Test conditions
Ic=-10µA, IE=0
Ic=-1mA, IB=0
IE=-10µA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
VCE=-2V, IC=-50mA
VCE=-2V, IC=-1A
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-50mA
VCB=-10V, f=1MHz
MIN TYP MAX UNIT
-25
V
-25
V
-5
V
-0.1 µA
-0.1 µA
100
560
40
-0.7 V
-1.2 v
180
MHz
25
pF
WE^{CLASSIFICATION OF hFE(1)}
Rank
R
S
T
U
Range
100-200
140-280
200-400
280-560
Marking
BB
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]