2SB1197K_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – PNP Epitaxial Planar Transistor

RoHS
2SB1197K
2SB1197K _FEATURES
TRANSISTOR (PNP)
D _{Power dissipation}
T _PCM:
200 mW (Tamb=25℃)
Collector current
.,L ^ICM:
-800 mA
Collector-base voltage
V_(BR)CBO: -40 V
Operating and storage junction temperature range
O _{TJ, Tstg: -55℃ to +150℃}
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
C _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
IC _Parameter
Collector-base breakdown voltage
N _{Collector-emitter breakdown voltage}
O _{Emitter-Base breakdown voltage}
R _{Collector cut-off current}
T _{Emitter cut-off current}
DC current gain
C _{Collector-emitter saturation voltage}
E _{Transition frequency}
L _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=-50µA, IE=0
Ic=-1mA, IB=0
IE=-50µA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
VCE=-3V, IC=-100mA
IC=-0.5A, IB=-50mA
VCE=-5V, IC=-50mA
f=100MHz
VCE=-10V, IC=0
f=1MHz
MIN
TYP
-40
-32
-5
82
50
200
12
MAX
-0.5
-0.5
390
-0.5
UNIT
V
V
V
µA
µA
V
MHz
30
pF
E _{CLASSIFICATION OF hFE(1)}
J _Rank
E_Range
W^Marking
P
82-180
AHP
Q
120-270
AHQ
R
180-390
AHR
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